1. BAYINDIR SİNAN, YİĞİT EVİN, AKMAN FERİDE, SEVGİLİ ÖMER, ORAK İKRAM, DAYAN OSMAN (2023). The electrical and photophysical performances of axially-substituted naphthalene diimide-based small molecules as interface layer. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 294, Doi: 10.1016/j.mseb.2023.116510 (Yayın No: 8429123)
2. BODUR CANHAKAN, DUMAN SONGÜL, ORAK İKRAM, SARITAŞ SEVDA, BARIŞ ÖZLEM (2023). The photovoltaic and photodiode properties of Au/Carmine/n-Si/Ag diode. OPTICS AND LASER TECHNOLOGY, 162, Doi: 10.1016/j.optlastec.2023.109251 (Yayın No: 8429132)
3. UZUN İLHAN, YİĞİT EVİN, KARAKAPLAN MEHMET, ORAK İKRAM (2023). Synthesis and characterization of new cellulose derivatives and evaluation of cellulose and these new cellulose derivatives in diode construction. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 34, Doi: 10.1007/s10854-023-10527-2 (Yayın No: 8429135)
4. YİĞİT EVİN, SEVGİLİ ÖMER, ORAK İKRAM (2023). The electrical, and photosensitive behavior of diodes with rare earth elements (Yb and Er) doped sodium yttrium fluoride interfacial layer. PHYSICA SCRIPTA, 98, Doi: 10.1088/1402-4896/accd28 (Yayın No: 8429138)
5. YİĞİT EVİN, SEVGİLİ ÖMER, ORAK İKRAM (2023). Electrical properties of Al/p-Si diode with AlN interface layer under temperature and illumination stimuli for sensing applications. APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 129, Doi: 10.1007/s00339-023-06432-4 (Yayın No: 8429142)
6. ATA AHMET, YILDIKO ÜMİT, ORAK İKRAM, YİĞİT EVİN, TANRIVERDİ ASLIHAN, EBİRİ RÜSTEM, ÇAKMAK İSMAİL (2023). Two?step novel aromatic polyimide synthesis and characterization: Survey of energy calculations and diode applications. JOURNAL OF APPLIED POLYMER SCIENCE, 140, Doi: 10.1002/app.53689 (Yayın No: 8429148)
7. TAŞYÜREK LÜTFİ BİLAL, SARILMAZ ADEM, RÜŞEN AYDIN, YİĞİT EVİN, ÖZEL FARUK, ORAK İKRAM (2023). The electrical response of the Au/Mn2Mo6S8/p-Si diode under different physical stimuli. Elsevier BV, 287, Doi: 10.1016/j.mseb.2022.116139 (Yayın No: 8790152)
8. SEVGİLİ ÖMER, ÖZEL FARUK, RÜŞEN AYDIN, YİĞİT EVİN, ORAK İKRAM (2022). The surface and electrical properties of the Al/Ba2P2O7/p-Si heterojunctions in wide range of temperature and frequency. Surfaces and Interfaces, 28, Doi: 10.1016/j.surfin.2021.101637 (Yayın No: 7334082)
9. ORAK İKRAM, ŞAHİN TIRAŞ KEVSER, SEVGİLİ ÖMER (2022). The examination of the electrical properties of Al/Mg2Si/p-Si Schottky diodes with an ecofriendly interfacial layer depending on temperature and frequency. PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 144, Doi: 10.1016/j.physe.2022.115380 (Yayın No: 8129386)
10. ÖZEL FARUK, ORAK İKRAM, ARIKAN EMRE, DEVECİ İLYAS, YILDIRIM MURAT, YILDIRIM MEHMET, ERDAL MEHMET OKAN, SARILMAZ ADEM, KOÇYİĞİT ADEM, KARABULUT ABDULKERİM, ÖZEN ABDURRAHMAN, ALJABOUR ABDALAZIZ, KUŞ MAHMUT, ERSÖZ MUSTAFA (2022). Refractory?Metal?Based Chalcogenides for Energy. Advanced Functional Materials, 32, Doi: 10.1002/adfm.202207705 (Yayın No: 8128259)
11. ORAK İKRAM, SEYMEN HALİL, BERK NİYAZİ, KARATAŞ ŞÜKRÜ (2022). Effect of illumination intensity on the electrical characteristics of Au//SiO2/n-type Si structures with GO and P3C4MT interface layer. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 33, Doi: 10.1007/s10854- 022-08801-w (Yayın No: 8129237)
12. ORAK İKRAM, YİĞİT EVİN, SEVGİLİ ÖMER, KARABULUT ABDULKERİM, RÜŞEN AYDIN, ÖZEL FARUK (2022). The diode and photodiode performances of BaZrO3 perovskite-based device under the influence of thermal and light external stimuli. SENSORS AND ACTUATORS A-PHYSICAL, 337, Doi: 10.1016/j.sna.2022.113413 (Yayın No: 8129464)
13. BERK NİYAZİ, SEYMEN HALİL, ORAK İKRAM, KARATAŞ ŞÜKRÜ (2022). The structural and optical properties of GO: Temperature-dependent analysis of the electrical properties of Al/GO/p-type Si semiconductor structures. Journal of Physics and Chemistry of Solids, 160, Doi: 10.1016/j.jpcs.2021.110348 (Yayın No: 7334110)
14. ORAK İKRAM, YİĞİT EVİN, SEVGİLİ ÖMER, BAYINDIR SİNAN, AKMAN FERİDE, DAYAN OSMAN (2022). The synthesis and photoelectrical performances of perylenediimide-based devices as an interface layer in metal-organic-semiconductors. MATERIALS SCIENCE AND ENGINEERING B-ADVANCED FUNCTIONAL SOLID-STATE MATERIALS, 286, Doi: 10.1016/j.mseb.2022.116036 (Yayın No: 8127896)
15. UZUN İLHAN, ORAK İKRAM, SEVGİLİ ÖMER, YİĞİT Evin, KARAKAPLAN MEHMET (2022). Synthesis of canthaxanthin from beta-carotene and evaluation of both substances in diode construction. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 33(4)-1898., Doi: 10.1007/s10854- 021-07389-x (Yayın No: 8127856)
16. Özdemir Muhammed Can, SEVGİLİ ÖMER, ORAK İKRAM, TURUT ABDULMECİT (2021). Determining the potential barrier presented by the interfacial layer from the temperature induced I-V characteristics in Al/p-Si Structure with native oxide layer. Materials Science in Semiconductor Processing, 125, 105629, Doi: 10.1016/j.mssp.2020.105629 (Yayın No: 6761889)
17. SEVGİLİ ÖMER, TAŞYÜREK LÜTFİ BİLAL, BAYINDIR SİNAN, ORAK İKRAM, ÇALIŞKAN ERAY (2021). The current transformer mechanism and structural properties of novel Al/BODIPY/pSi and Au/BODIPY/pSi heterojunctions. Materials Science in Semiconductor Processing, 130, Doi: 10.1016/j.mssp.2021.105805 (Yayın No: 7094092)
18. Kaya Fikriye Şeyma,DUMAN SONGÜL,ORAK İKRAM,BARIŞ ÖZLEM (2021). Effect of illumination on the electrical characteristics of Au/n-GaP/Al and Au/Chlorophyll-a/n-GaP/Al structures. Materials Science and Engineering: B, 265, 114980, Doi: 10.1016/j.mseb.2020.114980 (Yayın No: 6820090)
19. KARABULUT ABDULKERİM, LAFZİ FERRUH, BAYINDIR SİNAN, SEVGİLİ ÖMER, ORAK İKRAM (2021). The synthesis, current transformer mechanism and structural properties of novel rhodanine-based Al/Bis(Rh)-Ph/p-Si and Al/Bis(Rh)-TPE/p-Si heterojunctions. Journal of Molecular Structure, 1231, Doi: 10.1016/j.molstruc.2020.129699 (Yayın No: 7334028)
20. ASLAN BİLAL, TAN SERHAT ORKUN, ORAK İKRAM, TECİMER HABİBE (2021). Comparative study of the effect of different interlayer thicknesses on frequency dependent electric modulus and conductivity in Au/n-Si structures. Thin Solid Films, 738, Doi: 10.1016/j.tsf.2021.138968 (Yayın No: 7333947)
21. YEŞİLDAĞ ALİ, ERDOĞAN MUSA, SEVGİLİ ÖMER, ÇALDIRAN ZAKİR, ORAK İKRAM (2021). Optical and Electrical Properties of Pyrene-Imine Organic Interface Layer Based on p-Si. Journal of Electronic Materials, 50, Doi: 10.1007/s11664-021-09178-y (Yayın No: 7333996)
22. BERK NİYAZİ, SEYMEN HALİL, ORAK İKRAM, KARATAŞ ŞÜKRÜ (2021). The electrical characteristics of metal\semiconductor hetero-structures with graphene oxide and perylenetetracarboxylic dianhydride interface. Journal of Materials Science: Materials in Electronics, 32, Doi: 10.1007/s10854-021-06283-w (Yayın No: 7334009)
23. UZUN İLHAN, ORAK İKRAM, KARAER YAĞMUR HATİCE, YALMAN MURAT (2021). Determination of Electrical and Photoelectrical Properties of Schottky Diodes Made Using New Chitin Derivatives Synthesized as Interface Layer. Silicon, 13, 4703-4078., Doi: 10.1007/s12633-020-00779-6 (Yayın No: 7485342)
24. YILDIZ DİLBER ESRA, KARABULUT ABDULKERİM, ORAK İKRAM, TURUT ABDULMECİT (2021). Effect of atomic-layer-deposited HfO2 thin-film interfacial layer on the electrical properties of Au/Ti/nGaAs Schottky diode. Journal of Materials Science: Materials in Electronics, 32, Doi: 10.1007/s10854-021-05676-1 (Yayın No: 7094114)
25. SEVGİLİ ÖMER, ORAK İKRAM (2021). The investigation of current condition mechanism of Al/Y2O3/p-Si Schottky barrier diodes in wide range temperature and illuminate. Microelectronics Reliability, 117, Doi: 10.1016/j.microrel.2021.114040 (Yayın No: 7334053)
26. DUMAN SONGÜL,EJDERHA KADİR,ORAK İKRAM,YILDIRIM NEZİR,TURUT ABDULMECİT (2020). Temperature dependence of interface state density distribution determined from conductance–frequency measurements in Ni/n-GaP/Al diode. JOURNAL OF MATERIALS SCIENCEMATERIALS IN ELECTRONICS, 31(23), 21260-21271. (Yayın No: 6804374)
27. UZUN İLHAN,ORAK İKRAM,KARAKAPLAN MEHMET,KARAER YAĞMUR HATİCE,YALÇIN ŞERİFE,AKKILIÇ KEMAL (2020). Characterization of synthesized new chitin derivatives and Schottky diodes made using these derivatives. Journal of Materials Science: Materials in Electronics, 31(22), 20090- 20100., Doi: 10.1007/s10854-020-04530-0 (Yayın No: 6803375)
28. TÜRÜT ABDÜLMECİT,YILDIZ DİLBER ESRA,KARABULUT ABDULKERİM,ORAK İKRAM (2020). Electrical characteristics of atomic layer deposited Au/Ti/HfO2/n-GaAs MIS diodes in the wide temperature range. JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 31(10), 7839-7849. (Yayın No: 6500186)
29. Sarilmaz Adem,Ozel Faruk,KARABULUT ABDULKERİM,ORAK İKRAM,Şahinkaya Mehmet Akif (2020). The effects of temperature and frequency changes on the electrical characteristics of hot-injected Cu2MnSnS4 chalcogenide-based heterojunction. Physica B: Condensed Matter, 580, 411821 (Yayın No: 6866889)
30. ORAK İKRAM,KARABULUT ABDULKERİM (2020). Frequency and voltage dependence of electrical conductivity, complex electric modulus, and dielectric properties of Al/Alq3/p-Si structure. TURKISH JOURNAL OF PHYSICS, 44(1), 85-94. (Yayın No: 6865650)
31. KARABULUT ABDULKERİM,SARILMAZ ADEM,ÖZEL FARUK,ORAK İKRAM,Şahinkaya Mehmet Akif (2020). A novel device fabricated with Cu2NiSnS4chalcogenide: Morphological and temperaturedependent electrical characterizations. CURRENT APPLIED PHYSICS, 20(1), 58-64., Doi: 10.1016/j.cap.2019.10.011 (Yayın No: 5748694)
32. SEVGİLİ ÖMER,Canlı S,AKMAN FERDİ,ORAK İKRAM,KARABULUT ABDULKERİM,YILDIRIM NEZİR (2020). Characterization of aluminum 8-hydroxyquinoline microbelts and microdots, and photodiode applications. Journal of Physics and Chemistry of Solids, 136, 109128, Doi: 10.1016/j.jpcs.2019.109128 (Yayın No: 5673970)
33. ORAK İKRAM,ÇALDIRAN ZAKİR,Bakir Mete,Cifci Osman S,KOÇYİĞİT ADEM (2020). The Aromatic Thermosetting Copolyester for Schottky Diode Applications in a Wide Temperature Range. Journal Of Electronic Materials, 49(1), 402-409., Doi: 10.1007/s11664-019-07738-x (Yayın No: 5752563)
34. SEVGİLİ ÖMER,lafzi ferruh,KARABULUT ABDULKERİM,ORAK İKRAM,BAYINDIR SİNAN (2019). The synthesis of new bola-amphiphile TPEs and the comparison of current transformer mechanism and structural properties for Al/Bis(HCTA)-TPE/p-Si and Al/Bis(HCOA)-TPE/p-Si heterojunctions. Composites Part B: Engineering, 172, 226-233., Doi: 10.1016/j.compositesb.2019.05.020 (Yayın No: 5892782)
35. KARABULUT ABDULKERİM,ORAK İKRAM,ÇAĞLAR MÜJDAT,TURUT ABDULMECİT (2019). THE CURRENT–VOLTAGE CHARACTERISTICS OVER THE MEASUREMENT TEMPERATURE OF 60–400 K IN THE Au/Ti/n-GaAs CONTACTS WITH HIGH DIELECTRIC HfO sub2/sub INTERFACIAL LAYER/title. SURFACE REVIEW AND LETTERS, 26(08), 1950045, Doi: 10.1142/S0218625X19500458 (Yayın No: 4614655)
36. ORAK İKRAM,Eren Hamit,Bıyıklı Necmi,DANA AYKUTLU (2019). Utilizing embedded ultra-small Pt nanoparticles as charge trapping layer in flashristor memory cells. Applied Surface Science, 467468, 715-722., Doi: 10.1016/j.apsusc.2018.10.213 (Yayın No: 5677554)
37. Djeghlouf Asmaa,Hamri Djillali,Teffahi Abdelkader,Saidane Abdelkader,Al Mashary Faisal,Al Huwayz Maryam,Henini Mohamed,ORAK İKRAM,Albadri Abdulrahman M,Alyamani Ahmed Y (2019). Effect of indium doping on the electrical and structural properties of TiO2 thin films used in MOS devices. JOURNAL OF ALLOYS AND COMPOUNDS, 775, 202-213., Doi: 10.1016/j.jallcom.2018.10.048 (Yayın No: 5892252)
38. KOÇYİĞİT ADEM,KARTERİ İBRAHİM,ORAK İKRAM,URUŞ SERHAN,çaylar Mahmut (2018). The structural and electrical characterization of Al/GO-SiO2/p-Si photodiode. PHYSICA E-LOWDIMENSIONAL SYSTEMS NANOSTRUCTURES, 103(null), 452-458., Doi: 10.1016/j.physe.2018.06.006 (Yayın No: 4621420)
39. KARABULUT ABDULKERİM,ORAK İKRAM,TURUT ABDULMECİT (2018). The photovoltaic impact of atomic layer deposited TiO2 interfacial layer on Si-based photodiodes. SOLID-STATE ELECTRONICS, 144(null), 39-48., Doi: 10.1016/j.sse.2018.02.016 (Yayın No: 4621466)
40. KARABULUT ABDULKERİM,ORAK İKRAM,canli serdal,YILDIRIM NEZİR,TURUT ABDULMECİT (2018). Temperature-dependent electrical characteristics of Alq3/p-Si heterojunction. PHYSICA BCONDENSED MATTER, 550(1), 68-74., Doi: 10.1016/j.physb.2018.08.029 (Yayın No: 4621454)
41. ORAK İKRAM,KOÇYİĞİT ADEM,KARTERİ İBRAHİM,URUŞ SERHAN (2018). Frequency-Dependent Electrical Characterization of GO-SiO2 Composites in a Schottky Device. Journal of Electronic Materials, 47(11), 6691-6700., Doi: 10.1007/s11664-018-6571-4 (Yayın No: 4614774)
42. ORAK İKRAM,KOÇYİĞİT ADEM,KARATAŞ ŞÜKRÜ (2018). The Analysis of the Electrical and Photovoltaic Properties of Cr/p-Si Structures Using Current-Voltage Measurements. Silicon, 10(5), 2109-2116., Doi: 10.1007/s12633-017-9731-x (Yayın No: 4275878)
43. KOÇYİĞİT ADEM,ORAK İKRAM,TURUT ABDULMECİT (2018). Temperature dependent dielectric properties of Au/ZnO/n-Si heterojuntion. Materials Research Express, 5(3), 35906, Doi: 10.1088/2053-1591/aab2e3 (Yayın No: 4275923)
44. EJDERHA KADİR,ORAK İKRAM,DUMAN SONGÜL,TURUT ABDULMECİT (2018). The Effect of Thermal Annealing and Measurement Temperature on Interface State Density Distribution and Time Constant in Ni/n-GaP Rectifying Contacts. Journal of Electronic Materials, Doi: 10.1007/s11664- 018-6192-y (Yayın No: 4275898)
45. Badrinezhad Lida,BİLKAN ÇİĞDEM,Azizian-Kalandaragh Yashar,Nematullahzade Ali,ORAK İKRAM,ALTINDAL ŞEMSETTİN (2018). Preparation and characterization of cross-linked poly (vinyl alcohol)-graphene oxide nanocomposites as an interlayer for Schottky barrier diodes. International Journal of Modern Physics B, 32(01), 1750276, Doi: 10.1142/S0217979217502769
46. KOÇYİĞİT ADEM,ORAK İKRAM,ÇALDIRAN ZAKİR,TURUT ABDULMECİT (2017). Current–voltage characteristics of Au/ZnO/n-Si device in a wide range temperature. Journal of Materials Science: Materials in Electronics, 28(22), 17177-17184., Doi: 10.1007/s10854-017-7646-3 (Yayın No: 3683243)
47. Nikravan Afsoun,Badali Yosef,ALTINDAL ŞEMSETTİN,USLU İBRAHİM,ORAK İKRAM (2017). On the Frequency and Voltage-Dependent Profiles of the Surface States and Series Resistance of Au/ZnO/n-Si Structures in a Wide Range of Frequency and Voltage. Journal of Electronic Materials, 46(10), 5728-5736., Doi: 10.1007/s11664-017-5613-7 (Yayın No: 4184087)
48. Lapa Havva Elif,KÖKCE ALİ,Al-Dharob Mohammed,ORAK İKRAM,ÖZDEMİR AHMET FARUK,ALTINDAL ŞEMSETTİN (2017). title Interfacial layer thickness dependent electrical characteristics of Au/(Zndoped PVA)/ in/i -4H-SiC (MPS) structures at room temperature/title. The European Physical Journal Applied Physics, 80(1), 10101, Doi: 10.1051/epjap/2017170147 (Yayın No: 3861646)
49. DEMİREZEN SELÇUK,ORAK İKRAM,AZİZİAN KALANDARAGH YASHAR,ALTINDAL ŞEMSETTİN (2017). Series resistance and interface states effects on the C–V and G/w–V characteristics in Au/(Co3O4- doped PVA)/n-Si structures at room temperature. Journal of Materials Science: Materials in Electronics, 28(17), 12967-12976., Doi: 10.1007/s10854-017-7128-7 (Yayın No: 3516721)
50. KOÇYİĞİT ADEM,ORAK İKRAM,KARTERİ İBRAHİM,URUŞ SERHAN (2017). The structural analysis of MWCNT-SiO 2 and electrical properties on device application. Current Applied Physics, 17(9), 1215-1222., Doi: 10.1016/j.cap.2017.05.006 (Yayın No: 3683214)
51. ALTINDAL YERİŞKİN SEÇKİN,BALBAŞI MUZAFFER,ORAK İKRAM (2017). The effects of (graphene doped-PVA) interlayer on the determinative electrical parameters of the Au/n-Si (MS) structures at room temperature. Journal of Materials Science: Materials in Electronics, 28(18), 14040-14048., Doi: 10.1007/s10854-017-7255-1 (Yayın No: 3884366)
52. BARAZ NALAN,YÜCEDAĞ İBRAHİM,Azizian-Kalandaragh Yashar,ERSÖZ GÜLÇİN,ORAK İKRAM,ALTINDAL ŞEMSETTİN,Akbari Bashir,Akbari Hossein (2017). Electric and Dielectric Properties of Au/ZnS-PVA/n-Si (MPS) Structures in the Frequency Range of 10\u2013200 kHz. Journal of Electronic Materials, 46(7), 4276-4286., Doi: 10.1007/s11664-017-5363-6.
53. Altındal seçkin,BALBAŞI MUZAFFER,ORAK İKRAM (2017). Frequency dependent electrical characteristics and origin of anomalous capacitance–voltage (C–V) peak in Au/(graphene-doped PVA)/n-Si capacitors. Journal of Materials Science: Materials in Electronics, 28(11), 7819-7826., Doi: 10.1007/s10854-017-6478-5 (Yayın No: 3861875)
54. ÇETİNKAYA HAYRİYE GÖKÇEN,ALTINDAL ŞEMSETTİN,USLU İBRAHİM,ORAK İKRAM (2017). Electrical characteristics of Au/n-Si (MS) Schottky Diodes (SDs) with and without different rates (grapheneCa1.9Pr0.1Co4Ox-doped poly(vinyl alcohol)) interfacial layer. Journal of Materials Science: Materials in Electronics, 28(11), 7905-7911., Doi: 10.1007/s10854-017-6490-9 (Yayın No: 3446118)
55. KOÇYİĞİT ADEM,ORAK İKRAM,AYDOĞAN ŞAKİR,Çaldıran Zakir,TURUT ABDULMECİT (2017). Temperature-dependent C-V characteristics of Au/ZnO/n-Si device obtained by atomic layer deposition technique. Journal of Materials Science: Materials in Electronics, 28(8), 5880-5886., Doi: 10.1007/s10854-016-6261-z (Yayın No: 3485006)
56. ÇİÇEK OSMAN,USLU HABİBE,TAN SERHAT ORKUN,TECİMER HÜSEYİN,ORAK İKRAM,ALTINDAL ŞEMSETTİN (2017). Synthesis and characterization of pure and graphene (Gr)-doped organic/polymer nanocomposites to investigate the electrical and photoconductivity properties of Au/n-GaAs structures. Composites Part B: Engineering, 113, 14-23., Doi: 10.1016/j.compositesb.2017.01.012 (Yayın No: 3633461)
57. ORAK İKRAM,KOÇYİĞİT ADEM,ALTINDAL ŞEMSETTİN (2017). Electrical and dielectric characterization of Au/ZnO/n–Si device depending frequency and voltage. Chinese Physics B, 26(2), 28102, Doi: 10.1088/1674-1056/26/2/028102 (Yayın No: 3485085)
58. ORAK İKRAM,KOÇYİĞİT ADEM,TURUT ABDULMECİT (2017). The surface morphology properties and respond illumination impact of ZnO n Si photodiode by prepared atomic layer deposition technique. Journal of Alloys and Compounds, 691, 873-879., Doi: 10.1016/j.jallcom.2016.08.295 (Yayın No: 3007431)
59. ORAK İKRAM (2016). The performances photodiode and diode of ZnO thin film by atomic layer deposition technique. Solid State Communications, 247, 17-22., Doi: 10.1016/j.ssc.2016.08.004 (Yayın No: 3032738)
60. TAN SERHAT ORKUN,USLU HABİBE,ÇİÇEK OSMAN,TECİMER HÜSEYİN,ORAK İKRAM,ALTINDAL ŞEMSETTİN (2016). Electrical characterizations of Au ZnO n GaAs Schottky diodes under distinct illumination intensities. Journal of Materials Science: Materials in Electronics, 27(8), 8340-8347., Doi: 10.1007/s10854-016-4843-4 (Yayın No: 3007406)
61. ERSÖZ GÜLÇİN,YÜCEDAĞ İBRAHİM,AzizianKalandaragh, yashar,ORAK İKRAM,ALTINDAL ŞEMSETTİN (2016). Investigation of Electrical Characteristics in Al CdS PVA p Si MPS Structures Using Impedance Spectroscopy Method. IEEE Transactions on Electron Devices, 63(7), 2948-2955., Doi: 10.1109/TED.2016.2566813 (Yayın No: 3007378)
62. SOYLU MURAT,ORAK İKRAM,DAYAN OSMAN,ŞERBETÇİ ZAFER (2015). A novel photodiode based on Ruthenium II complex containing polydentate pyridine as photocatalyst. Microelectronics Reliability, 55(12), 2685-2688., Doi: 10.1016/j.microrel.2015.08.004 (Yayın No: 1864930)
63. ORAK İKRAM,EJDERHA KADİR,TURUT ABDULMECİT (2015). The electrical characterizations and illumination response of Co N type GaP junction device. Current Applied Physics, 15(9), 1054- 1061., Doi: 10.1016/j.cap.2015.05.014 (Yayın No: 1864864)
64. ORAK İKRAM,ürel mustafa,BAKAN GÖKHAN,DANA AYKUTLU (2015). Memristive behavior in a junctionless flash memory cell. Applied Physics Letters, 106(23), 233506, Doi: 10.1063/1.4922624 (Yayın No: 1864834)
65. ORAK İKRAM,TURUT ABDULMECİT,TOPRAK MAHMUT (2015). The comparison of electrical characterizations and photovoltaic performance of Al p Si and Al Azure C p Si junctions devices. Synthetic Metals, 200, 66-73., Doi: 10.1016/j.synthmet.2014.12.023 (Yayın No: 1864616)
66. DOĞAN HÜLYA,YILDIRIM NEZİR,ORAK İKRAM,ELAGÖZ SEZAİ,TURUT ABDULMECİT (2015). Capacitance conductance frequency characteristics of Au Ni n GaN undoped GaN Structures. Physica B: Condensed Matter, 457, 48-53., Doi: 10.1016/j.physb.2014.09.033 (Yayın No: 1864203)
67. ORAK İKRAM,EJDERHA KADİR,SÖNMEZ ERDAL,ALANYALIOĞLU MURAT,TURUT ABDULMECİT (2015). The effect of annealing temperature on the electrical characterization of Co n type GaP Schottky diode. Materials Research Bulletin, 61, 463-468., Doi: 10.1016/j.materresbull.2014.10.066 (Yayın No: 1864421)
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