1 TURUT ABDULMECIT,KARABULUT ABDULKERIM,EJDERHA KADIR,BIYIKLI NECMI (2015).
Capacitance–conductance characteristics of Au/Ti/Al2O3/n-GaAs
structures with very thin Al2O3 interfacial layer. Mater. Res. Express , 2(046301), (Kontrol No:
1379644)
2 Orak I., Ejderha K., Sönmez E., Alanyalıoglu M., Turut A. (2015). The effect of annealing
temperature on the electrical characterization of Co/n type GaP Schottky diode. Materials
Research Bulletin, 61, 463-468., Doi: 10.1016/j.materresbull.2014.10.066, (Kontrol No: 1242171)
3 Ejderha Kadir, Yıldırm N., Turut A. (2014). Temperature-dependent current-voltage
characteristics in thermally annealed ferromagnetic Co/n-GaN Schottky contacts. The European
Physical Journal Applied Physics, 68(2), 20101, Doi: 10.1051/epjap/2014140200, (Kontrol No:
1220676)
4 EJDERHA KADIR,DUMAN SONGÜL,NUHOGLU ÇIGDEM,urhan fatma,TURUT ABDULMECIT (2014).
Effect of temperature on the current (capacitance and conductance)–voltage characteristics of
Ti/n-GaAs diode. Journal of Applied Physics, 52(6), 1005-1011., Doi: 10.1016/j.microrel.
2011.12.018, (Kontrol No: 1379785)
5 Duman S., Ejderha K., Yigit Ö., Türüt A. (2012). Determination of contact parameters of Ni/n-GaP
Schottky contacts. Microelectronics Reliability, 52(6), 1005-1011., Atıf Sayısı: 1, Doi: 10.1016/j.
microrel.2011.12.018, (Kontrol No: 253483)
6 Ejderha K., Yıldırım N., Türüt A., Abay B. (2012). Temperature-dependent I-V characteristics in
thermally annealed Co/p-InP contacts. The European Physical Journal Applied Physics, 57(10102),
1-6., Doi: 10.1051/epjap/2011110221, (Kontrol No: 168816)
7 Akbay Atakan, Korkut Hatun, Ejderha Kadir, Korkut Turgay, Türüt Abdülmecit (2011). Responses
of Pt/n-InP Schottky diode to electron irradiation in different temperature conditions. Journal of
Radioanalytical and Nuclear Chemistry, 289(1), 145-148., Atıf Sayısı: 4, Doi: 10.1007/s10967-
011-1041-y, (Kontrol No: 168830)
8 Ejderha K., Zengin A., Orak I., Tasyurek B., Kilinç T., Turut A. (2011). Dependence of
characteristic diode parameters on sample temperature in Ni/epitaxy n-Si contacts. Materials
Science in Semiconductor Processing, 14(1), 5-12., Atıf Sayısı: 4, Doi: 10.1016/j.mssp.
2010.12.010, (Kontrol No: 168801)
9 Gülen Y., Ejderha K., Nuhoglu Ç., Turut A. (2011). Schottky barrier height modification in Au/ntype
6H–SiC structures by PbS interfacial layer. Microelectronic Engineering, 88(2), 179-182., Atıf
Sayısı: 7, Doi: 10.1016/j.mee.2010.10.009, (Kontrol No: 168775)
10 Gülen Y., Alanyalıoglu M., Ejderha K., Nuhoglu Ç., Turut A. (2011). Electrical and optical
characteristics of Au/PbS/n-6H–SiC structures prepared by electrodeposition of PbS thin film on ntype
6H–SiC substrate. Journal of Alloys and Compounds, 509(6), 3155-3159., Atıf Sayısı: 4, Doi:
10.1016/j.jallcom.2010.12.028, (Kontrol No: 253537)
11 Ejderha K., Yıldırım N., Türüt A., Abay B. (2010). Influence of interface states on the temperature
dependence and current–voltage characteristics of Ni/p-InP Schottky diodes. Superlattices and
Microstructures, 47(2), 241-252., Atıf Sayısı: 10, Doi: 10.1016/j.spmi.2009.11.008, (Kontrol No:
168786)
12 Yıldırım Nezir, Ejderha Kadir, Turut Abdulmecit (2010). On temperature-dependent experimental
I-V and C-V data of Ni/n-GaN Schottky contacts. Journal of Applied Physics, 108(11), 1-8., Atıf
Sayısı: 22, Doi: 10.1063/1.3517810, (Kontrol No: 253582)
13 Ejderha K., Yıldırım N., Abay B., Turut A. (2009). Examination by interfacial layer and
inhomogeneous barrier height model of temperature-dependent I–V characteristics in Co/p-InP
contacts. Journal of Alloys and Compounds, 484(1-2), 870-876., Atıf Sayısı: 18, Doi: 10.1016/j.
jallcom.2009.05.062, (Kontrol No: 253585)